Kingston Technology KSM26SED8/32MF memory module 32 GB 1 x 32 GB DDR4 2666 MHz ECC1

Kingston Technology KSM26SED8/32MF memory module 32 GB 1 x 32 GB DDR4 2666 MHz ECC

Kingston Technology KSM26SED8/32MF. Component for: Notebook, Internal memory: 32 GB, Memory layout (modules x size): 1 x 32 GB, Internal memory type: DDR4, Memory clock speed: 2666 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 19, ECC

Manufacturer: Kingston Technology

SKU: 12115491

Manufacturer part number: KSM26SED8/32MF

Vendor: Synnex

MSRP: $181.00

Price: $133.84

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16 internal banks
Data transfer rates: PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
Bi-Directional Differential Data Strobe
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
Supports ECC error correction and detection
On-Die Termination (ODT)
Temperature sensor with integrated SPD
This product is in compliance with the RoHS directive
Per DRAM Addressability is supported

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16 internal banks
Data transfer rates: PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
Bi-Directional Differential Data Strobe
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
Supports ECC error correction and detection
On-Die Termination (ODT)
Temperature sensor with integrated SPD
This product is in compliance with the RoHS directive
Per DRAM Addressability is supported

Products specifications

Attribute name	Attribute value
Width	2.74"
Depth	0.146"
Height	1.18"
JEDEC standard	Y
Lead plating	Gold
Row cycle time	45.75 ns
Refresh row cycle time	350 ns
Row active time	32 ns
Programming power voltage (VPP)	2.5 V
Technical details
Sustainability certificates	RoHS
Sustainability compliance	Y
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Features
Internal memory	32 GB
Internal memory type	DDR4
Memory clock speed	2666 MHz
Component for	Notebook
Memory form factor	260-pin SO-DIMM
ECC	Y
Buffered memory type	Unregistered (unbuffered)
CAS latency	19
Memory voltage	1.2 V
Memory layout (modules x size)	1 x 32 GB
Memory ranking	2
Module configuration	4096M x 72

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Products specifications

Attribute name	Attribute value
Width	2.74"
Depth	0.146"
Height	1.18"
JEDEC standard	Y
Lead plating	Gold
Row cycle time	45.75 ns
Refresh row cycle time	350 ns
Row active time	32 ns
Programming power voltage (VPP)	2.5 V
Technical details
Sustainability certificates	RoHS
Sustainability compliance	Y
Operational conditions
Operating temperature (T-T)	0 - 85 °C
Storage temperature (T-T)	-55 - 100 °C
Features
Internal memory	32 GB
Internal memory type	DDR4
Memory clock speed	2666 MHz
Component for	Notebook
Memory form factor	260-pin SO-DIMM
ECC	Y
Buffered memory type	Unregistered (unbuffered)
CAS latency	19
Memory voltage	1.2 V
Memory layout (modules x size)	1 x 32 GB
Memory ranking	2
Module configuration	4096M x 72